PART |
Description |
Maker |
2SK3524 |
N-CHANNE SILLCON POWER MOSFET N-CHANNE SILLCON POWER MOSFET - CHANNE SILLCON功率MOSFET
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Fuji Electric Electronic Theatre Controls, Inc.
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MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
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Motorola, Inc
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IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S |
26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 2MM TERMINAL STRIPS HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
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IXYS[IXYS Corporation] IXYS, Corp.
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1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V. High speed high conductance diode. Working inverse voltage 175 V. General purpose low diode. Working inverse voltage 100V. 500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). General purpose low diode. Working inverse voltage 200V. General Purpose Diodes
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
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IRF840 IRF820 IRFE430-JQR-B IRF741 IRFE210-JQR-BE4 |
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 1.8 A, 200 V, 1.725 ohm, Si, POWER, MOSFET 1.2 A, 400 V, 4.15 ohm, N-CHANNEL, Si, POWER, MOSFET 3.1 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
SEMELAB LTD
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PDTD113E PDTD113ET PDTD113EK PDTD113ES |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm
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NXP Semiconductors PHILIPS[Philips Semiconductors]
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IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 21 A, 60 V, 0.042 ohm, N-CHANNE 28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. JST Mfg. Co., Ltd. Vishay Intertechnology, Inc. Austin Semiconductor, Inc
|
RFP2N20 FN2881 |
2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET 2A 200V 3.500 Ohm N-Channel Power MOSFET From old datasheet system 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
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INTERSIL[Intersil Corporation]
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PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
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IRF9640 RF1S9640SM FN2284 |
11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs From old datasheet system 11A 200V 0.500 Ohm P-Channel Power MOSFETs 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
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IRFF210 FN1887 |
2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET From old datasheet system 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
SA90CA SA50 SA8.0CA SA8.0A SA7.0A SA6.0A SA5.0A SA |
DEVICES FOR BIPOLAR APPLICATIONS 500 Watt Transient Voltage Suppressors(500瓦瞬变电压抑制器) 500瓦瞬态电压抑制器00瓦瞬变电压抑制器 500 Watt Transient Voltage Suppressors(500瓦瞬变电压抑制器) 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 500 Watt Transient Voltage Suppressors(500瓦瞬变电压抑制器) 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15 RES 511 OHM 1/10W .1% 0805 SMD 双极器件中的应用 DEVICES FOR BIPOLAR APPLICATIONS 双极器件中的应用 4AV Series Hall-Effect Vane with 24 AWG irradiated polyethelene 558,8 mm [22 in] lead wires CONNECTOR ACCESSORY
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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